BCR8PM Mitsubishi Electronics America, Inc., BCR8PM Datasheet - Page 3

• Manufacturer Part Number: BCR8PM
• Description: Low Power Use Insulated Type, Planar Passivation Type Triac
• Manufacturer: Mitsubishi Electronics America, Inc.

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150 C
10
10
10
10
10
10
10
10
10
10
10
–1
–1
3
2
7
5
3
2
7
5
3
2
7
5
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
3
2
1
–60
3
2
1
0
10
V
1
I
1
FGT I
MAXIMUM TRANSIENT THERMAL
–40
IMPEDANCE CHARACTERISTICS
GM
2 3 5 7
JUNCTION TEMPERATURE ( C)
V
2 3
GATE TRIGGER VOLTAGE VS.
GT
JUNCTION TEMPERATURE
GATE CHARACTERISTICS
= 10V
–20
(JUNCTION TO AMBIENT)
= 1.5V
GATE CURRENT (mA)
I
5 7 10
10
RGT I,
CONDUCTION TIME
(CYCLES AT 60Hz)
0
2
2 3 5 7
( ,
2
20
I
RGT III
P
2 3 5 7 10
G(AV)
TYPICAL EXAMPLE
AND
40
10
3
2 3 5 7
60
= 0.5W
)
80
V
3
P
10
GD
GM
NO FINS
2 3 5 7 10
I
100
GM
4
= 0.2V
2 3 5 7
= 5W
120
= 2A
140
10
4
5
INSULATED TYPE, PLANAR PASSIVATION TYPE
10
10
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
16
14
12
10
7
5
4
3
2
7
5
4
3
2
0
10
8
6
4
2
0
–60
3
2
1
10
0
MITSUBISHI SEMICONDUCTOR TRIAC
–1
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
I
2
MAXIMUM TRANSIENT THERMAL
RGT I
–40
IMPEDANCE CHARACTERISTICS
JUNCTION TEMPERATURE ( C)
2 3
2 3
GATE TRIGGER CURRENT VS.
RMS ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER
2
JUNCTION TEMPERATURE
–20
I
(JUNCTION TO CASE)
FGT I
5 7 10
5 7 10
CONDUCTION TIME
4
I
RGT III
(CYCLES AT 60Hz)
0
DISSIPATION
6
3
0
20
2
2 3 5 7 10
TYPICAL EXAMPLE
40
8
60
MEDIUM POWER USE
10
80
1
12
100
2 3 5 7 10
14
120
BCR8PM
140
16
2
Mar. 2002