BCR8PM Mitsubishi Electronics America, Inc., BCR8PM Datasheet - Page 10

• Manufacturer Part Number: BCR8PM
• Description: Low Power Use Insulated Type, Planar Passivation Type Triac
• Manufacturer: Mitsubishi Electronics America, Inc.

The product guaranteed maximum junction
temperature 150 C (See warning.)
RATE OF RISE OF OFF-STATE VOLTAGE (V/ s)
160
140
120
100
160
140
120
100
10
10
80
60
40
20
80
60
40
20
0
0
7
5
3
2
7
5
3
2
7
10
1
0
10
–60
COMMUTATION CHARACTERISTICS
1
0
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
OFF-STATE VOLTAGE (T
COMMUTATING CURRENT (A /ms)
–40
JUNCTION TEMPERATURE ( C)
RATE OF DECAY OF ON-STATE
2 3
(dv/dt)c
BREAKOVER VOLTAGE VS.
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
2 3
–20
5 7 10
0
RATE OF RISE OF
III QUADRANT
20
5 7 10
(T
2
j
2 3 5 7 10
I QUADRANT
(di/dt)c
40
= 150 C)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
TIME
TIME
TIME
V
60
1
MINIMUM
CHARAC-
TERISTICS
VALUE
D
III QUADRANT
80
2 3
I QUADRANT
100
3
j
T
TYPICAL
EXAMPLE
T
I
V
f = 3Hz
T
= 150 C)
j
2 3 5 7 10
j
D
= 500 s
= 150 C
= 4A
120
= 150 C
= 200V
5 7 10
140
160
2
4
INSULATED TYPE, PLANAR PASSIVATION TYPE
RATE OF RISE OF OFF-STATE VOLTAGE (V/ s)
160
140
120
100
10
10
10
10
10
80
60
40
20
0
7
5
3
2
7
5
3
2
7
7
5
4
3
2
7
5
4
3
2
10
1
0
10
3
2
1
10
MITSUBISHI SEMICONDUCTOR TRIAC
COMMUTATION CHARACTERISTICS
GATE CURRENT PULSE WIDTH ( s)
1
0
0
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
MINIMUM
CHARAC-
TERISTICS
VALUE
OFF-STATE VOLTAGE (T
COMMUTATING CURRENT (A /ms)
RATE OF DECAY OF ON-STATE
GATE CURRENT PULSE WIDTH
2 3
GATE TRIGGER CURRENT VS.
III QUADRANT
(dv/dt)c
BREAKOVER VOLTAGE VS.
2 3
2 3
I
FGT I
5 7 10
RATE OF RISE OF
4
I
5 7 10
5 7 10
RGT I
(T
2
j
2 3 5 7 10
(di/dt)c
= 125 C)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
I
TIME
TIME
TIME
RGT III
V
1
1
D
MEDIUM POWER USE
III QUADRANT
I QUADRANT
2 3
2 3
I QUADRANT
3
j
T
TYPICAL
EXAMPLE
T
I
V
f = 3Hz
T
= 125 C)
j
2 3 5 7 10
j
D
= 500 s
= 125 C
= 4A
= 125 C
4
= 200V
5 7 10
5 7 10
BCR8PM
2
2
4
Mar. 2002