BCR8PM Mitsubishi Electronics America, Inc., BCR8PM Datasheet - Page 8

• Manufacturer Part Number: BCR8PM
• Description: Low Power Use Insulated Type, Planar Passivation Type Triac
• Manufacturer: Mitsubishi Electronics America, Inc.

The product guaranteed maximum junction
temperature 150 C (See warning.)
10
10
10
10
10
10
10
10
10
10
10
–1
–1
3
2
7
5
3
2
7
5
3
2
7
5
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
3
2
1
3
2
1
0
–60
10
V
1
I
1
FGT I
–40
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
GM
2 3 5 7
JUNCTION TEMPERATURE ( C)
V
2 3
GATE TRIGGER VOLTAGE VS.
GT
JUNCTION TEMPERATURE
–20
GATE CHARACTERISTICS
= 10V
(JUNCTION TO AMBIENT)
= 1.5V
GATE CURRENT (mA)
I
5 7 10
10
RGT I,
CONDUCTION TIME
(CYCLES AT 60Hz)
0
2
2 3 5 7
( ,
20
2
I
RGT III
P
2 3 5 7 10
40
G(AV)
TYPICAL EXAMPLE
AND
10
60
3
2 3 5 7
= 0.5W
80
)
100
V
3
P
10
GD
GM
NO FINS
2 3 5 7 10
I
GM
120
4
= 0.1V
2 3 5 7
= 5W
= 2A
140
160
10
4
5
INSULATED TYPE, PLANAR PASSIVATION TYPE
10
10
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
16
14
12
10
10
7
5
4
3
2
7
5
4
3
2
0
8
6
4
2
0
–60
3
2
1
10
0
MITSUBISHI SEMICONDUCTOR TRIAC
–1
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
2
MAXIMUM TRANSIENT THERMAL
–40
IMPEDANCE CHARACTERISTICS
JUNCTION TEMPERATURE ( C)
2 3
2 3
GATE TRIGGER CURRENT VS.
I
RMS ON-STATE CURRENT (A)
RGT I
MAXIMUM ON-STATE POWER
2
JUNCTION TEMPERATURE
–20
(JUNCTION TO CASE)
5 7 10
5 7 10
CONDUCTION TIME
4
I
(CYCLES AT 60Hz)
FGT I
0
I
RGT III
DISSIPATION
6
3
0
20
2 3 5
2 3 5 7 10
TYPICAL EXAMPLE
40
8
60
MEDIUM POWER USE
10
80
1
12
100
2 3 5 7 10
14
120
BCR8PM
140
16
2
Mar. 2002