BCR8PM Mitsubishi Electronics America, Inc., BCR8PM Datasheet - Page 5

• Manufacturer Part Number: BCR8PM
• Description: Low Power Use Insulated Type, Planar Passivation Type Triac
• Manufacturer: Mitsubishi Electronics America, Inc.

Refer to the page 6 as to the product guaranteed
maximum junction temperature 150 C
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
TEST PROCEDURE 1
TEST PROCEDURE 3
160
140
120
100
10
10
80
60
40
20
0
7
5
3
2
7
5
3
2
7
6V
6V
–60
1
0
10
6
6
COMMUTATION CHARACTERISTICS
0
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
MINIMUM
CHARAC-
TERISTICS
VALUE
COMMUTATING CURRENT (A /ms)
–40
JUNCTION TEMPERATURE ( C)
RATE OF DECAY OF ON-STATE
(dv/dt)c
BREAKOVER VOLTAGE VS.
III QUADRANT
JUNCTION TEMPERATURE
2 3
–20
V
V
A
A
0
5 7 10
20
(di/dt)c
R
R
TYPICAL EXAMPLE
G
G
40
TIME
TIME
TIME
V
1
D
TEST PROCEDURE 2
60
I QUADRANT
6V
2 3
6
80
TYPICAL
EXAMPLE
T
I
V
f = 3Hz
T
j
D
= 500 s
100
= 125 C
= 4A
= 200V
5 7 10
120
V
A
140
2
R
G
INSULATED TYPE, PLANAR PASSIVATION TYPE
RATE OF RISE OF OFF-STATE VOLTAGE (V/ s)
160
140
120
100
10
10
10
80
60
40
20
0
7
5
4
3
2
7
5
4
3
2
10
3
2
1
10
MITSUBISHI SEMICONDUCTOR TRIAC
GATE CURRENT PULSE WIDTH ( s)
1
0
GATE CURRENT PULSE WIDTH
2 3
GATE TRIGGER CURRENT VS.
BREAKOVER VOLTAGE VS.
2 3
I
FGT I
OFF-STATE VOLTAGE
5 7 10
RATE OF RISE OF
4
I
5 7 10
RGT I
2
2 3 5 7 10
TYPICAL EXAMPLE
TYPICAL EXAMPLE
I
RGT III
1
MEDIUM POWER USE
III QUADRANT
2 3
I QUADRANT
3
T
j
2 3 5 7 10
= 125 C
4
5 7 10
BCR8PM
2
4
Mar. 2002