MT18D836X Micron Semiconductor Products, Inc., MT18D836X Datasheet - Page 5

• Manufacturer Part Number: MT18D836X
• Description: 72-Pin DRAM Simms, Ecc Optimized, (x36), , Status: End of Life (EOL)
• Manufacturer: Micron Semiconductor Products, Inc.

NOT RECOMMENDED FOR NEW DESIGNS
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Operating Temperature, T
Storage Temperature (plastic) ............ -55°C to +125°C
Power Dissipation ................................................... 9W
Short Circuit Output Current ............................. 50mA
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6) (V
Icc SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6) (V
4, 8 Meg x 36 ECC-Optimized DRAM SIMMs
DM65_2.p65 – Rev. 9/98
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT:
(DQ is disabled; 0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
PARAMETER/CONDITION
STANDBY CURRENT: (TTL)
(RAS# = CAS# = V
STANDBY CURRENT: (CMOS)
(RAS# = CAS# = Other Inputs = V
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
OPERATING CURRENT: EDO PAGE MODE
Average power supply current
(RAS# = V
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling;
IL
, CAS#, address cycling:
DD
Supply Relative to V
DD
DD
IN
IH
= +5V ±10%)
= +5V ±10%)
)
≤ 5.5V
OUT
OUT
OUT
IH
A
:
= 4.2mA)
t
(ambient) ... 0°C to +70°C
≤ 5.5V)
= -5mA)
RC =
t
t
RC =
RC =
t
DD
RC [MIN])
t
SS
PC =
- 0.2V)
t
t
RC [MIN])
RC [MIN])
....... -1V to +7V
t
PC [MIN])
5
CAS0#-CAS3#
A0-A10, WE#
RAS0#-RAS3#
DQ1-DQ36
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
SYMBOL
ECC-OPTIMIZED DRAM SIMMs
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
I
I
I
I
I
CC
CC
CC
CC
CC
CC
1
2
3
4
5
6
SYMBOL MIN
16MB
32MB
16MB
32MB
16MB
32MB
16MB
32MB
16MB
32MB
16MB
32MB
SIZE
V
V
V
V
V
I
I
I
I
OZ
DD
I
I
I
OH
OL
IH
1
2
3
IL
1,260
1,269
1,260
1,269
1,260
1,269
-1.0
990
999
4.5
2.4
-12
-36
-10
-10
2.4
18
-5
9
5
9
–
MAX
4, 8 MEG x 36
V
1,170
1,179
1,170
1,179
1,170
1,179
MAX UNITS NOTES
DD
900
909
5.5
0.8
0.4
12
36
10
10
18
-6
–
9
5
9
+ 1
©1998, Micron Technology, Inc.
UNITS NOTES
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
3, 21
3, 21
3, 21
3, 4
22
22
22