HY27UF082G2M Hynix Semiconductor, HY27UF082G2M Datasheet
HY27UF082G2M
Manufacturer Part Number
HY27UF082G2M
Description
(HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet
1.HY27UF082G2M.pdf
(53 pages)
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Rev 0.3 / Aug. 2005
Document Title
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory
Revision History
Revision
No.
0.0
0.1
0.2
Initial Draft.
1) Edit Pin Description table
2) Edit Data Protection texts
3) Add Read ID table
4) Add Marking Information
5) Add Application note
6) Change AC characteristics
1) Add ULGA Package.
- Figures & texts are added.
2) Correct the test Conditions (DC Characteristics table)
3) Change AC Conditions table
4) Add tWW parameter ( tWW = 100ns, min)
- Texts & Figures are added.
- tWW is added in AC timing characteristics table.
5) Add tRBSY (Table12)
- tRBSY (Dummy Busy Time for Cache Read)
- tRBSY is 5us (typ.)
- Figure 19,20 are edited.
6) Edit System Interface Using CE don’t care Figures.
Before
Before
Before
After
After
After
tCLS tCLH
tWC tWH
10
30
50
0
VIN=VOUT=0 to Vcc (max)
Test Conditions (
10
10
15
VIN=VOUT=0 to 3.6V
5
tCS
tRP
15
15
25
0
History
tCH
tRC tREA tREH tCEA
10
30
50
5
I
LI,
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash
I
LO
tWP tALS
15
25
18
35
)
10
10
20
0
tDS
10
20
23
45
tDH
10
5
HY27UF(08/16)2G2M Series
Aug. 09. 2005
May. 23. 2005
Draft Date
Dec. 2004
Preliminary
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Preliminary
Preliminary
Preliminary
Remark
1
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