HY27UF082G2M Hynix Semiconductor, HY27UF082G2M Datasheet - Page 3

• Manufacturer Part Number: HY27UF082G2M
• Description: (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

FEATURES SUMMARY
SUPPLY VOLTAGE
Memory Cell Array
PAGE SIZE
BLOCK SIZE
COPY BACK PROGRAM MODE
CACHE PROGRAM MODE
FAST BLOCK ERASE
Rev 0.3 / Aug. 2005
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
- 3.3V device: VCC = 2.7 to 3.6V
- x8 device : (2K + 64 spare) Bytes
- x16 device: (1K + 32 spare) Words
- x8 device: (128K + 4K spare) Bytes
- x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
- Random access: 30us (max.)
- Sequential access: 50ns (min.)
- Page program time: 200us (typ.)
- Fast page copy without external buffering
- Internal Cache Register to improve the program
- Block erase time: 2ms (Typ.)
throughput
= (2K+ 64) Bytes x 64 Pages x 2,048 Blocks
= (1K+32) Words x 64 pages x 2,048 Blocks
: HY27UF082G2M
: HY27UF162G2M
: HY27UFXX2G2M
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE DON'T CARE OPTION
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
HARDWARE DATA PROTECTION
DATA INTEGRITY
PACKAGE
SERIAL NUMBER OPTION
- Manufacturer Code
- Device Code
- Simple interface with microcontroller
- Boot from NAND support
- Automatic Memory Download
- Program/Erase locked during Power transitions
- 100,000 Program/Erase cycles
- 10 years Data Retention
- HY27UF(08/16)2G2M-T(P)
- HY27UF(08/16)2G2M-UP
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27UF(08/16)2G2M-T (Lead)
- HY27UF(08/16)2G2M-TP (Lead Free)
: 52-ULGA (12 x 17 x 0.65 mm)
- HY27UF(08/16)2G2M-UP (Lead Free)
HY27UF(08/16)2G2M Series
Preliminary
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