HY27UF082G2M Hynix Semiconductor, HY27UF082G2M Datasheet - Page 51

• Manufacturer Part Number: HY27UF082G2M
• Description: (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

MARKING INFORMATION -
Rev 0.3 / Aug. 2005
- h y n ix
- K O R
- H Y 2 7 x F x x 2 G 2 M x x x x
- Y : Y e a r ( e x : 5 = y e a r 2 0 0 5 , 0 6 = y e a r 2 0 0 6 )
- w w : W o rk W e e k ( e x : 1 2 = w o r k w e e k 1 2 )
- x x : P ro c e s s C o d e
N o t e
- C a p it a l L e t t e r
- S m a ll L e t t e r
H Y : H Y N I X
2 7 : N A N D F la s h
x : P o w e r S u p p ly
F : C la s s ific a tio n
x x : B it O rg a n iz a tio n
2 G : D e n s ity
2 : M o d e
M : V e r s io n
x : P a c k a g e T y p e
x : P a c k a g e M a te ria l
x : O p e ra tin g T e m p e r a tu r e
x : B a d B lo c k
P a c k a g
T S O P 1
U L G A
/
H
x
TSOP1 / ULGA
Y
x
2
x
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash
: H y n ix S y m b o l
: O r ig in C o u n try
: P a rt N u m b e r
: U ( 2 .7 V ~ 3 .6 V )
: S in g le L e v e l C e ll+ Q u a d r u p le D ie + L a rg e B lo c k
: 0 8 ( x 8 ) , 1 6 ( x 1 6 )
: 2 G b it
: 1 n C E & 1 R / n B ; S e q u e n tia l R o w R e a d D is a b le
: 1 s t G e n e r a tio n
: T ( 4 8 - T S O P 1 ) , U ( 5 2 -U L G A )
: B la n k ( N o rm a l) , P ( L e a d F r e e )
: C ( 0 ℃ ~ 7 0 ℃ ) , E ( - 2 5 ℃ ~ 8 5 ℃ )
: B ( I n c lu d e d B a d B lo c k ) , S ( 1 ~ 5 B a d B lo c k ),
: F ix e d I te m
: N o n - fix e d I te m
7
x
M ( - 3 0 ℃ ~ 8 5 ℃ ) , I ( - 4 0 ℃ ~ 8 5 ℃ )
P ( A ll G o o d B lo c k )
M a r k in g E x a m p le
x
F
HY27UF(08/16)2G2M Series
x
Y
x
W
2
W
G
K
Preliminary
O
2
x
M
R
x
51