HY27UF082G2M Hynix Semiconductor, HY27UF082G2M Datasheet - Page 52

• Manufacturer Part Number: HY27UF082G2M
• Description: (HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Preliminary
HY27UF(08/16)2G2M Series
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash
Application Note
1. Power-on/off Sequence
After power is on, the device starts an internal circuit initialization when the power supply voltage reaches a specific
level. The device shows its internal initialization status with the Ready/Busy signal if initialization is on progress. While
the device is initializing, the device sets internal registeries to default value and generates internal biases to operate
circuits. Typically the initializing time of 20us is required.
Power-off or power failure before write/erase operation is complete will cause a loss of data. The WP# signal helps
user to protect not only the data integrity but also device circuitry from being damaged at power-on/off by keeping
WP# at VIL during power-on/off.
For the device to operate stably, it is highly recommended to operate the device as shown Fig.40.
Figure 40: Power-on/off sequence
Rev 0.3 / Aug. 2005
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