HY27UF082G2M Hynix Semiconductor, HY27UF082G2M Datasheet - Page 48
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HY27UF082G2M
Manufacturer Part Number
HY27UF082G2M
Description
(HY27UF(08/16)2G2M) 2Gbit (256Mx8bit/128Mx16bit) NAND Flash Memory
Manufacturer
Hynix Semiconductor
Datasheet
1.HY27UF082G2M.pdf
(53 pages)
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Preliminary
HY27UF(08/16)2G2M Series
2Gbit (256Mx8bit / 128Mx16bit) NAND Flash
5. APPENDIX : Extra Features
5.1 Automatic Page0 Read after Power Up
The timing diagram related to this operation is shown in Fig. 27
Due to this functionality the CPU can directly download the boot loader from the first page of the NAND flash, storing
it inside the internal cache and starting the execution after the download completed.
5.2 Addressing for program operation
Within a block, the pages must be programmed consecutively from LSB (least significant bit) page of the block to MSB
(most significant bit) page of the block. Random address programming is prohibited. See Fig. 32.
Rev 0.3 / Aug. 2005
48