MT28C3224P18 Micron Semiconductor Products, Inc., MT28C3224P18 Datasheet - Page 27

• Manufacturer Part Number: MT28C3224P18
• Description: 2 Meg X 16 Page Flash, 256K X 16 SRAM Combo Memory, 66-ball Fbga
• Manufacturer: Micron Semiconductor Products, Inc.

COMBINED DC CHARACTERISTICS (continued)
NOTE: 1. All currents are in RMS unless otherwise noted.
2 Meg x 16 Page Flash 256K x 16 SRAM Combo Memory
MT28C3224P20_4.p65 – Rev. 4, Pub. 10/02
DESCRIPTION
S_V
Supply Current – Page Access
Mode
V
(Read, Standby, Erase Suspend,
Program Suspend)
PP
CC
Current
Read/Write Operating
2. V
3. 12V V
4. APS mode reduces I
5. Test conditions: Vcc = V
6. I
7. Operating current is a linear function of operating frequency and voltage. Operating current can be calculated using
add a current draw of I
the formula shown with operating frequency (f) expressed in MHz and operating voltage (V) in volts.
Example: When operating at 2 MHz at 2V, the device will draw a typical active current of 0.8*2*2 = 3.2mA in the page
access mode. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add
current required to drive output capacitance expected in the actual system.
CC 6
IL
may decrease to -0.4V and V
and I
PP
is supported for a maximum of 100 cycles and may be connected for up to 10 cumulative hours.
CC 7
values are valid when the device is deselected. Any READ operation performed while in suspend mode will
CC
to approximately I
CC 1
CC
(MAX), CE# = V
or I
chip enabled, I
CC 2
IH
.
CONDITIONS
V
may increase to V
IN
V
V
= V
PP
PP
CC 3
≤ V
≥ V
IH
IL
, OE# = V
or V
levels.
CC
CC
OL
IL
= 0
CC
IH
27
256K x 16 SRAM COMBO MEMORY
. All other inputs = V
Q + 0.3V for durations not to exceed 20ns.
SYMBOL
1
I
I
CC
PP
9
1
V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
CC
–
–
–
/V
2 MEG x 16 PAGE FLASH
IH
CC
or V
Q = 1.70V–1.90V
or 1.80V–2.20V
IL
TYP
.
12
–
–
MAX
200
25
1
UNITS NOTES
©2002, Micron Technology, Inc.
mA
µA
µA
7