MT28F002B3 Micron Semiconductor Products, Inc., MT28F002B3 Datasheet - Page 23

• Manufacturer Part Number: MT28F002B3
• Description: 2Mb Smart 3 Boot Block Flash Memory
• Manufacturer: Micron Semiconductor Products, Inc.

RECOMMENDED DC WRITE/ERASE CONDITIONS
Commercial Temperature (0 C
WRITE/ERASE CURRENT DRAIN
Commercial Temperature (0 C
NOTE: 1. WRITE operations are tested at V
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
PARAMETER/CONDITION
V
V
V
V
Boot block unlock voltage
V
PARAMETER/CONDITION
WORD WRITE CURRENT: V
WORD WRITE CURRENT: V
BYTE WRITE CURRENT: V
BYTE WRITE CURRENT: V
ERASE CURRENT: V
ERASE CURRENT: V
ERASE SUSPEND CURRENT: V
(ERASE suspended)
ERASE SUSPEND CURRENT: V
(ERASE suspended)
PP
PP
PP
PP
CC
WRITE/ERASE lockout voltage
voltage during WRITE/ERASE operation
voltage during WRITE/ERASE operation
voltage during WRITE/ERASE operation
WRITE/ERASE lockout voltage
2. Absolute WRITE/ERASE protection when V
3. When 3.3V V
4. For SmartVoltage-compatible production programming, 12V V
5. Applies to MT28F200B3 only.
6. Applies to MT28F002B3 and MT28F200B3 with BYTE = LOW.
7. Parameter is specified when device is not accessed. Actual current draw will be I
tested at V
be connected for up to 100 cumulative hours.
executed while the device is in erase suspend mode.
CC
CC
PP
CC
voltages equal to or less than the previous WRITE.
SUPPLY
SUPPLY
and V
CC
PP
CC
PP
SUPPLY
PP
SUPPLY
SUPPLY
CC
PP
SUPPLY
are used, Vcc cannot exceed V
SUPPLY
SUPPLY
T
T
A
A
+70 C) and Extended Temperature (-40 C
+70 C) and Extended Temperature (-40 C
CC
/V
PP
voltages equal to or less than the previous ERASE, and READ operations are
PP
SMART 3 BOOT BLOCK FLASH MEMORY
V
PPLK
.
23
PP
by more than 500mV during WRITE and ERASE operations.
1
PP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
is supported for a maximum of 100 cycles and may
SYMBOL
I
I
I
I
I
I
I
I
CC
SYMBOL
CC
CC
CC
PP
PP
PP
PP
10
V
V
V
3
4
5
6
V
7
8
9
V
V
PPH
PPH
PPH
PPLK
LKO
HH
1
2
3
3.3V V
CC 10
T
T
MAX
A
A
200
25
25
9
9
9
6
8
plus read current if a READ is
MIN
11.4
11.4
4.5
+85 C); V
3
2
+85 C); V
–
PP
5V V
MAX
MAX UNITS NOTES
200
12.6
12.6
25
30
1.5
3.6
5.5
9
9
9
6
8
–
CC
CC
PP
= +3.3V 0.3V
= +3.3V 0.3V
©2000, Micron Technology, Inc.
UNITS NOTES
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
A
2Mb
2
3
4
5
5
6
6
7