MT55L256L32P Micron Semiconductor Products, Inc., MT55L256L32P Datasheet

MT55L256L32P

Manufacturer Part Number

MT55L256L32P

Description

8Mb: 512K X 18, 256K X 32/36 Pipelined ZBT SRAM

Manufacturer

Micron Semiconductor Products, Inc.

Datasheet

1.MT55L256L32P.pdf (25 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MT55L256L32PIT-10

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MT55L256L32PT-7.5

Manufacturer:

INFINEON

Quantity:

1 953

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8Mb

ZBT

FEATURES

• High frequency and 100 percent bus utilization

• Fast cycle times: 6ns, 7.5ns and 10ns

• Single +3.3V ±5% power supply (V

• Separate +3.3V or +2.5V isolated output buffer

• Advanced control logic for minimum control

• Individual BYTE WRITE controls may be tied LOW

• Single R/W# (read/write) control pin

• CKE# pin to enable clock and suspend operations

• Three chip enables for simple depth expansion

• Clock-controlled and registered addresses, data

• Internally self-timed, fully coherent WRITE

• Internally self-timed, registered outputs to

• SNOOZE MODE for reduced-power standby

• Common data inputs and data outputs

• Linear or Interleaved Burst Modes

• Burst feature (optional)

• Pin/function compatibility with 2Mb, 4Mb, and

• Automatic power-down

• 100-pin TQFP package

• 165-pin FBGA package

OPTIONS

• Timing (Access/Cycle/MHz)

• Configurations

• Package

• Operating Temperature Range

8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM

MT55L512L18P_C.p65 – Rev. 2/02

supply (V

signal interface

I/Os and control signals

eliminate the need to control OE#

18Mb ZBT SRAM

3.5ns/6ns/166 MHz

4.2ns/7.5ns/133 MHz

5ns/10ns/100 MHz

3.3V I/O

2.5V I/O

100-pin TQFP

165-pin, 13mm x 15mm FBGA

Commercial (0ºC to +70ºC)

Industrial (-40°C to +85°C)**

512K x 18

256K x 32

256K x 36

512K x 18

256K x 32

256K x 36

SRAM

MT55L256L32PT-7.5

Part Number Example:

MT55L512V18P

MT55L256V32P

MT55L256V36P

MT55L512L18P

MT55L256L32P

MT55L256L36P

MARKING

)

None

-7.5

-10

-6

MT55L512L18P, MT55L512V18P,

MT55L256L32P, MT55L256V32P,

MT55L256L36P, MT55L256V36P

3.3V V

* A Part Marking Guide for the FBGA devices can be found on Micron’s

** Industrial temperature range offered in specific speed grades and

GENERAL DESCRIPTION

family employs high-speed, low-power CMOS designs

using an advanced CMOS process.

256K x 32, or 256K x 36 SRAM core with advanced

synchronous peripheral circuitry and a 2-bit burst

counter. These SRAMs are optimized for 100 percent

bus utilization, eliminating any turnaround cycles for

READ to WRITE, or WRITE to READ, transitions. All

synchronous inputs pass through registers controlled

by a positive-edge-triggered single clock input (CLK).

The synchronous inputs include all addresses, all data

inputs, chip enable (CE#), two additional chip enables

for easy depth expansion (CE2, CE2#), cycle start input

NOTE: 1. JEDEC-standard MS-026 BHA (LQFP).

Web

configurations. Contact factory for more information.

The Micron

Micron’s 8Mb ZBT SRAMs integrate a 512K x 18,

site—http://www.micron.com/support/index.html.

8Mb: 512K x 18, 256K x 32/36

, 3.3V or 2.5V I/O

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Zero Bus Turnaround

100-Pin TQFP

165-Pin FBGA

PIPELINED ZBT SRAM

™

(ZBT

) SRAM

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