MT57V1MH18E Micron Semiconductor Products, Inc., MT57V1MH18E Datasheet - Page 16

• Manufacturer Part Number: MT57V1MH18E
• Description: 18Mb DDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 2.5V V
MT57V1MH18E_16_F.fm – Rev. F, Pub. 3/03
1. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, etc.
2. Outputs are disabled (High-Z) one clock cycle after a NOP.
3. The second NOP cycle is not necessary for correct device operation; however, at high clock frequencies it may be
R/W#
CQ#
CQ
LD#
C#
DQ
K#
C
K
A
t KHCH
required to prevent bus contention.
Qx2
NOP
1
t KHKL
t
IVKH
DD
, HSTL, Pipelined DDRb4 SRAM
t KLKH
t AVKH t KHAX
t KHCH
A0
READ
(burst of 4)
2
t KHKH
t KHIX
t CHQX1
t CHQV
3
t KHK#H
Q00
t CHQX
Q01
A1
t CHQV
t CHQX
READ
(burst of 4)
4
Q02
Q03
5
t CHQX
Q10
READ/WRITE Timing
Q11
t CQHQZ
6
NOP
2.5V V
t KHKL
Q12
t CQHQX
t CQHQV
t CHQZ
Figure 6:
t KLKH
Q13
7
NOP
(Note 3)
16
DD
t KHKH
t CQHQZ
, HSTL, PIPELINED DDRb4 SRAM
A2
8
WRITE
(burst of 4)
t DVKH
t KHK#H
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t KHDX
D20
9
D21
1 MEG x 18, 512K x 36
t DVKH
D22
t KHDX
A3
WRITE
(burst of 4)
10
D23
D30
11
D31
DON’T CARE
D32
A4
READ
(burst of 4)
12
©2003 Micron Technology, Inc.
D33
13
UNDEFINED
Q40
t CQHQX1