MT57W1MH18C Micron Semiconductor Products, Inc., MT57W1MH18C Datasheet - Page 16

• Manufacturer Part Number: MT57W1MH18C
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 13: AC Electrical Characteristics and Recommended Operating Conditions
18Mb: 2 Meg x 8, 1 Meg x 18, 512K x 36, 1.8V V
MT57W1MH18C_H.fm – Rev. H, Pub. 3/03
DESCRIPTION
C HIGH to
output Low-Z
Setup Times
Address valid
to K rising
edge
Control inputs
valid to K rising
edge
Data-in valid to
K, K# rising
edge
Hold Times
K rising edge
to address hold
K rising edge
to control
inputs hold
K, K# rising
edge to data-in
hold
(Continued)
t
t
t
t
t
CHQX1 -0.45
t
t
AVKH
DVKH
KHAX
KHDX
SYM
IVKH
KHIX
DD
0.40
0.40
0.28
0.40
0.40
0.28
, HSTL, DDR SIO SRAM
MIN
-3
MAX
-0.45
MIN
0.40
0.40
0.30
0.40
0.40
0.30
-3.3
MAX
-0.45
0.35
0.50
0.50
0.35
MIN
0.50
0.50
-4
16
MAX
2 MEG
1.8V V
-0.45
0.60
0.60
0.40
0.60
0.60
0.40
MIN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-5
MAX
X
8, 1 MEG
DD
-0.50
MIN
0.70
0.70
0.50
0.70
0.70
0.50
, HSTL, DDR SIO SRAM
-6
MAX
X
-0.50
0.70
0.70
0.50
0.70
0.70
0.50
MIN
18, 512K
-7.5
MAX
©2003 Micron Technology, Inc.
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
X
36
16
16
16
16
16
16