BC817N3 Cystech Electonics Corp, BC817N3 Datasheet - Page 2

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BC817N3

Manufacturer Part Number
BC817N3
Description
General Purpose NPN Epitaxial Planar Transistor
Manufacturer
Cystech Electonics Corp
Datasheet
Characteristics
Classification of hFE 1:
Rank
Range
BC817N3
*V
Symbol
*V
BV
BV
BV
*h
*h
I
I
Cob
CBO
EBO
CE(sat)
BE(on)
f
FE
FE
T
CBO
CEO
EBO
1
2
100--250
Min.
16
100
100
50
45
40
5
-
-
-
-
-
(Ta=25 C)
Typ.
CYStech Electronics Corp.
160--400
5
-
-
-
-
-
-
-
-
-
-
25
Max.
100
100
700
600
1.2
-
-
-
-
-
-
250--600
40
MHz
Unit
mV
nA
nA
pF
V
V
V
V
I
I
I
V
V
I
V
V
V
V
V
C
C
E
C
*Pulse Test: Pulse Width 380
CE
EB
CE
CE
CE
CE
CB
=10µA
=10µA
=1mA
=500mA, I
=20V
=5V
=1V, I
=1V, I
=1V, I
=5V, I
=10V, I
C
C
C
C
=500mA
=100mA
=500mA
=10mA, f=100MHz
E
=0A,f=1MHz
B
Test Conditions
=50mA
CYStek Product Specification
www.DataSheet4U.com
Spec. No. : C906N3
Issued Date : 2003.05.12
Revised Date :
Page No. : 2/4
µ
s, Duty Cycle 2%

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