BTB1182J3 Cystech Electonics Corp, BTB1182J3 Datasheet - Page 2

• Manufacturer Part Number: BTB1182J3
• Description: Low Vcesat PNP Epitaxial Planar Transistor
• Manufacturer: Cystech Electonics Corp

Characteristics
Classification Of hFE
BTB1182J3
*V
Symbol
BV
BV
BV
Range
*h
I
I
Cob
Rank
CBO
EBO
CE(sat)
f
T
CBO
CEO
EBO
FE
Min.
-40
-30
82
-5
-
-
-
-
-
(Ta=25 C)
82~180
P
CYStech Electronics Corp.
Typ.
100
50
-
-
-
-
-
-
-
120~270
Q
Max.
560
-1
-1
-1
-
-
-
-
-
MHz
Unit
180~390
µA
µA
pF
V
V
V
V
-
R
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
=-50µA, I
=-50µA, I
=-1mA, I
=-3A, I
=-20V, I
=-4V, I
=-3V, I
=-5V, I
=-10V, f =1MHz
270~560
B
=-0.1A
S
C
C
C
B
C
E
Test Conditions
=0
=-0.5A
=-0.1A, f=100MHz
E
=0
=0
=0
=0
CYStek Product Specification
www.DataSheet4U.com
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 2/4