BTB1205I3 Cystech Electonics Corp, BTB1205I3 Datasheet - Page 2

• Manufacturer Part Number: BTB1205I3
• Description: Low Vcesat PNP Epitaxial Planar Transistor
• Manufacturer: Cystech Electonics Corp

Absolute Maximum Ratings
Characteristics
Ordering Information
Parameter
BTB1205I3
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Power Dissipation (T
Power Dissipation (T
Junction Temperature
Storage Temperature
Note : 1
*V
*V
Symbol
BV
BV
BV
BTB1205I3
*h
*h
I
I
Cob
CBO
EBO
CE(sat)
BE(sat)
f
Device
T
CBO
CEO
EBO
FE
FE
.
Single Pulse Pw=10ms
Min.
190
-25
-20
60
-5
-
-
-
-
-
-
(Ta=25°C)
A
C
=25℃)
=25℃)
(RoHS compliant)
CYStech Electronics Corp.
Package
TO-251
Typ.
-380
-1.0
320
60
-
-
-
-
-
-
-
(Ta=25°C)
Max.
-500
-0.5
-0.5
-1.3
380
-
-
-
-
-
-
80 pcs / tube, 50 tubes / box
Symbol
V
V
V
Tstg
I
Pd
Pd
Tj
I
I
CBO
CEO
EBO
CP
MHz
Unit
C
B
mV
μA
μA
pF
V
V
V
V
-
-
Shipping
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Test Conditions
I
I
I
V
V
I
I
V
V
V
V
C
C
E
C
C
CB
EB
CE
CE
CE
CB
=-10μA, I
=-1mA, I
=-10μA, I
=-3A, I
=-3A, I
=-4V, I
=-2V, I
=-2V, I
=-5V, I
=-20V, I
=-10V, f =1MHz
B
B
=-60mA
=-60mA
-55~+150
C
C
C
C
B
E
C
=0
=-0.5A
=-4A
=-200mA, f =100MHz
Limits
=0
E
=0
=0
=0
-0.5
150
-25
-20
10
-8
-5
-5
1
CYStek Product Specification
www.DataSheet4U.com
(Note 1)
Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date : 2009.02.04
Page No. : 2/ 6
Marking
B1205
Unit
°C
°C
W
V
V
V
A
A