BTB1216J3 Cystech Electonics Corp, BTB1216J3 Datasheet - Page 6

• Manufacturer Part Number: BTB1216J3
• Description: PNP Epitaxial Planar High Current (High Performance) Transistor
• Manufacturer: Cystech Electonics Corp

Recommended wave soldering condition
Recommended temperature profile for IR reflow
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
Time within 5°C of actual peak
BTB1216J3
−Temperature Min(T
−Temperature Max(T
−Time(ts
−Temperature (T
− Time (t
temperature(tp)
Time maintained above:
Peak Temperature(T
Average ramp-up rate
Ramp down rate
Pb-free devices
Profile feature
(Tsmax to Tp)
Product
Preheat
L
min
)
to ts
L
max
)
)
S
S
P
min)
max)
)
CYStech Electronics Corp.
Sn-Pb eutectic Assembly
Peak Temperature
3°C/second max.
6°C/second max.
60-120 seconds
60-150 seconds
6 minutes max.
10-30 seconds
260 +0/-5 °C
240 +0/-5 °C
100°C
150°C
183°C
3°C/second max.
6°C/second max.
5 +1/-1 seconds
Pb-free Assembly
60-180 seconds
60-150 seconds
8 minutes max.
Soldering Time
20-40 seconds
260 +0/-5 °C
CYStek Product Specification
www.DataSheet4U.com
Spec. No. : C811J3
Issued Date : 2008.12.10
Revised Date : 2009.02.04
Page No. : 6/7
150°C
200°C
217°C