MRF6S18060MR1 Freescale Semiconductor, MRF6S18060MR1 Datasheet - Page 13

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MRF6S18060MR1

Manufacturer Part Number
MRF6S18060MR1
Description
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
Freescale Semiconductor
Datasheet
www.datasheet4u.com
RF Device Data
Freescale Semiconductor
−45
−50
−55
−60
−65
−70
−75
0
Figure 22. Spectral Regrowth at 400 kHz
10
P
out
, OUTPUT POWER (WATTS) AVG.
versus Output Power
20
T
C
30
= 25_C
−50
−55
−60
−65
−70
−75
−80
1780
TYPICAL CHARACTERISTICS — 1800 MHz
15 W Avg.
P
35 W Avg.
25 W Avg.
40
Figure 21. Spectral Regrowth at 400 kHz and
out
= 35 W Avg.
1800
V
I
f = 1860 MHz
DQ
DD
= 450 mA
= 26 Vdc
50
600 kHz versus Frequency
25 W Avg.
1820
10 W Avg.
f, FREQUENCY (MHz)
60
1840
SR 400 kHz
1860
−60
−65
−70
−75
−80
−85
SR 600 kHz
0
1880
Figure 23. Spectral Regrowth at 600 kHz
V
I
DQ
DD
1900
= 450 mA
10
= 26 Vdc
P
out
MRF6S18060MR1 MRF6S18060MBR1
, OUTPUT POWER (WATTS) AVG.
versus Output Power
1920
20
30
T
C
= 25_C
40
V
I
f = 1860 MHz
DQ
DD
= 450 mA
= 26 Vdc
50
13
60

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