MRF6S18060MR1 Freescale Semiconductor, MRF6S18060MR1 Datasheet - Page 9

• Manufacturer Part Number: MRF6S18060MR1
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: Freescale Semiconductor

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RF Device Data
Freescale Semiconductor
Figure 14. Series Equivalent Source and Load Impedance — 1900 MHz
Z
Z
Input
Matching
Network
source
load
1930
1960
1990
MHz
f
f = 1990 MHz
Z
load
V
= Test circuit impedance as measured from
= Test circuit impedance as measured
DD
= 26 Vdc, I
gate to ground.
from drain to ground.
Z
Z
source
o
f = 1930 MHz
= 10 Ω
8.00 - j6.48
7.57 - j6.82
7.06 - j7.06
Z
source
DQ
Device
Under Test
Ω
= 600 mA, P
Z
source
f = 1930 MHz
Z
out
load
= 60 W CW
2.83 - j5.13
2.63 - j4.84
2.44 - j4.54
f = 1990 MHz
Z
load
Ω
Output
Matching
Network
MRF6S18060MR1 MRF6S18060MBR1
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