MRF6S18060MR1 Freescale Semiconductor, MRF6S18060MR1 Datasheet - Page 3

• Manufacturer Part Number: MRF6S18060MR1
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: Freescale Semiconductor

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RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical GSM EDGE Performances (In Freescale Broadband Test Fixture, 50 οhm system) V
P
Typical CW Performances (In Freescale Broadband Test Fixture, 50 οhm system) V
1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz
out
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Drain Efficiency
Input Return Loss
P
out
= 25 W Avg., 1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz
@ 1 dB Compression Point, CW
Characteristic
(T
C
= 25°C unless otherwise noted) (continued)
Symbol
P1dB
EVM
SR1
SR2
G
G
IRL
η
η
ps
ps
D
D
DD
= 26 Vdc, I
Min
DD
—
—
—
—
—
—
—
—
—
MRF6S18060MR1 MRF6S18060MBR1
= 26 Vdc, I
DQ
= 600 mA, P
15.5
Typ
- 62
- 76
- 12
32
15
50
65
DQ
2
= 450 mA,
out
= 60 W,
Max
—
—
—
—
—
—
—
—
—
% rms
Unit
dBc
dBc
dB
dB
dB
W
%
%
3