MRF6S18060MR1 Freescale Semiconductor, MRF6S18060MR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6S18060MR1
• Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: Freescale Semiconductor

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MRF6S18060MR1 MRF6S18060MBR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Input Return Loss
P
1. Part is internally matched both on input and output.
out
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
@ 1 dB Compression Point
= 68 Vdc, V
= 26 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
D
GS
GS
= 200 μAdc)
= 600 mAdc)
= 2 Adc)
= 2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Test Methodology
Characteristic
(1)
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 26 Vdc, I
Symbol
DQ
V
Rating
V
V
P1dB
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
g
η
= 600 mA, P
3
rss
fs
ps
D
Min
Package Peak Temperature
out
—
—
—
—
—
—
14
48
—
60
1
2
= 60 W, f = 1930 MHz, f = 1990 MHz
0.24
260
Typ
- 12
2.8
5.3
1.5
15
50
65
—
—
—
1B (Minimum)
2
III (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
10
17
—
—
—
—
—
- 9
1
1
3
4
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dB
dB
°C
pF
%
W
S