MT16LSDT1664AG-133B1 Micron, MT16LSDT1664AG-133B1 Datasheet - Page 20

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MT16LSDT1664AG-133B1

Manufacturer Part Number
MT16LSDT1664AG-133B1
Description
DRAM Module, 64MB (x64, SR), 128MB (x64, DR) 168-PIN SDRAM UDIMM
Manufacturer
Micron
Datasheet
Table 18: EEPROM Device Select Code
The most significant bit (b7) is sent first
Table 19: EEPROM Operating Modes
pdf: 09005aef812230b2, source: 09005aef81037690
SD8_16C8_16x64AG.fm - Rev. C 7/04 EN
SDA OUT
Memory Area Select Code (two arrays)
Protection Register Select Code
MODE
Current Address Read
RandomAddressRead
Sequential Read
Byte Write
Page Write
SDA IN
SCL
t SU:STA
Figure 10: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V IH or V IL
V IH or V IL
V IH or V IL
V IH or V IL
WC
V
V
IL
IL
t HIGH
t HD:DAT
b7
1
0
DEVICE TYPE IDENTIFIER
20
BYTES
1
1
1
16
64MB (x64, SR), 128MB (x64, DR)
1
b6
0
1
t DH
t R
Start, Device Select, RW = 1
Start, Device Select, RW= 0, Address
RESTART, Device Select, RW= 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t SU:DAT
168-PIN SDRAM UDIMM
b4
0
0
INITIAL SEQUENCE
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
t BUF
©2004 Micron Technology, Inc.
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0

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