MT16LSDT1664AG-133B1 Micron, MT16LSDT1664AG-133B1 Datasheet - Page 23

• Manufacturer Part Number: MT16LSDT1664AG-133B1
• Description: DRAM Module, 64MB (x64, SR), 128MB (x64, DR) 168-PIN SDRAM UDIMM
• Manufacturer: Micron

Table 22: Serial Presence-Detect Matrix (Continued)
“1”/”0”: Serial data, “driven to HIGH”/”driven to LOW”; V
NOTE:
pdf: 09005aef812230b2, source: 09005aef81037690
SD8_16C8_16x64AG.fm - Rev. C 7/04 EN
1. The value of
99-125 Manufacturer-Specific Data (RSVD)
BYTE
36-40
42-61
65-71
73-90
95-98
126
127
31
32
33
34
35
41
62
63
64
72
91
92
93
94
DESCRIPTION
Module Rank Density
Command and Address Setup Time,
Command and Address Hold Time,
Data Signal Input Setup Time,
Data Signal Input Hold Time,
Reserved
Device Minimum Active/Auto-Refresh Time,
Reserved
SPD Revision
Checksum For Bytes 0-62
Manufacturer’s JEDEC ID Code
Manufacturer’s JEDEC ID Code(Cont.)
Manufacturing Location
Module Part Number (ASCII)
Pcb Identification Code
Identification Code (Cont.)
Year of Manufacture in BCD
Week of Manufacture in BCD
Module Serial Number
System Frequency
SDRAM Component & Clock Detail
t
RAS used for -13E modules is calculated from
t
DH
t
DS
t
AH,
t
AS,
t
t
CMH
CMS
t
RC
DD
23
= +3.3V ±0.3V
t
RC -
1.5 (-13E/-133)
0.8 (-13E/-133)
1.5 (-13E/-133)
0.8 (-13E/-133)
(-13E/-133/-10E)
64MB (x64, SR), 128MB (x64, DR)
(VERSION)
60ns (-13E)
66ns (-133)
70ns (10E)
MICRON
REV. 2.0
100 MHz
2 (-10E)
1 (-10E)
2 (-10E)
1 (-10E)
ENTRY
t
64MB
(-13E)
(-133)
(-10E)
1 - 11
RP. Actual device specification value is 37ns.
1 - 9
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
168-PIN SDRAM UDIMM
MT8LSDT864A
Variable Data
Variable Data
Variable Data
Variable Data
01 - 0B
01-09
3C
1B
2C
AF
10
15
20
08
10
15
20
08
10
00
42
46
00
02
83
CF
00
64
FF
MT16LSDT1664A
Variable Data
Variable Data
Variable Data
Variable Data
©2004 Micron Technology, Inc.
01 - 0B
01-09
3C
D0
1C
2C
10
15
20
08
10
15
20
08
10
00
42
46
00
02
84
00
64
FF
FF