MT28F128J3FS-15F Micron, MT28F128J3FS-15F Datasheet - Page 43

• Manufacturer Part Number: MT28F128J3FS-15F
• Description: 128Mb Q-FLASH MEMORY
• Manufacturer: Micron

AC CHARACTERISTICS – READ-ONLY OPERATIONS
(Notes: 1, 2, 4); Extended Temperature (-40ºC
NOTE: 1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined at the first edge
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_6.p65 – Rev. 5, Pub. 6/02
PARAMETER
READ/WRITE Cycle Time
Address to Output Delay
CEx to Output Delay
OE# to Non-Array Output Delay
OE# to Array Output Delay
RP# HIGH to Output Delay
CEx to Output in Low-Z
OE# to Output in Low-Z
CEx HIGH to Output in High-Z
OE# HIGH to Output in High-Z
Output Hold from Address, CEx, or OE#
Change, Whichever Occurs First
CEx LOW to BYTE# HIGH or LOW
BYTE# to Output Delay
BYTE# to Output in High-Z
CEx HIGH to CEx LOW
Page Address Access Time
2. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
3. OE# may be delayed up to
4. See Figures 12 and 13, Transient Input/Output Reference Waveform for V
5. When reading the Flash array, a faster
6. Sampled, not 100% tested.
of CE0, CE1, or CE2 that disables the device (see Table 1).
on
4.5V–5.5V, and Transient Equivalent Testing Load Circuit for testing characteristics.
DEVICE IDENTIFIER READs.
t
ACE .
t
ACE -
SYMBOL
t
AOE after the first edge of CEx that enables the device (see Table 1) without impact
t
t
t
t
t
t
t
t
t
t
t
t
RWH
ODO
CWH
AOA
OEO
AOE
ODC
t
ODB
t
ACE
OEC
ABY
APA
t
t
AA
OH
RC
CB
t
AOE applies. Nonarray READs refer to status register READs, QUERY READs, or
DENSITY
T
128Mb
128Mb
128Mb
128Mb
32Mb
64Mb
32Mb
64Mb
32Mb
64Mb
32Mb
64Mb
A
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
+85ºC)
43
MIN
110
120
150
0
0
0
0
V
3.0V–3.6V
CC
/V
CC
Q =
1,000
1,000
MAX
110
120
150
110
120
150
150
180
210
Micron Technology, Inc., reserves the right to change products or specifications without notice.
50
25
55
15
10
25
CC
Q = 3.0V–3.6V, V
V
128Mb, 64Mb, 32Mb
V
CC
MIN
110
120
150
CC
Q = 2.7V–3.6V
0
0
0
0
or 4.5V–5.5V
= 2.7V–3.6V
Q-FLASH MEMORY
1,000
1,000
MAX
110
120
150
110
120
150
150
180
210
50
30
55
15
10
30
CC
Q = 2.7V–3.6V, or V
PRELIMINARY
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
©2002, Micron Technology, Inc.
NOTES
3, 5
CC
5
6
6
6
6
6
6
6
6
6
Q =