MT28F128J3FS-15F Micron, MT28F128J3FS-15F Datasheet - Page 8
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MT28F128J3FS-15F
Manufacturer Part Number
MT28F128J3FS-15F
Description
128Mb Q-FLASH MEMORY
Manufacturer
Micron
Datasheet
1.MT28F128J3FS-15F.pdf
(51 pages)
valid; the data may be partially corrupted after a pro-
gram or partially changed after an erase or lock bit
configuration. After RP# goes to logic HIGH (V
after
After coming out of reset, the system expects to read
from the Flash memory. During block erase, program,
or lock bit configuration mode, automated Flash memo-
ries provide status information when accessed. When
a CPU reset occurs with no Flash memory reset, proper
initialization may not occur because the Flash memory
may be providing status information instead of array
data. Micron Flash memories allow proper initializa-
tion following a system reset through the use of the RP#
input. RP# should be controlled by the same RESET#
signal that resets the system CPU.
READ QUERY
information, CFI ID string, system interface informa-
tion, device geometry information, and extended query
information.
READ IDENTIFIER CODES
the manufacturer code, device code, and the block lock
configuration codes for each block (see Figure 2). The
block lock configuration codes identify locked and un-
locked blocks.
WRITE
vice data, query, identifier codes, and reading and clear-
ing of the status register. In addition, when V
block erasure, program, and lock bit configuration can
also be performed.
mand data and an address within the block. The BYTE/
WORD PROGRAM command requires the command
and address of the location to be written to. The CLEAR
BLOCK LOCK BITS command requires the command
and any address within the device. SET BLOCK LOCK
BITS command requires the command and the block to
be locked. The CEL does not occupy an addressable
memory location. It is written to when the device is
enabled and WE# is LOW. The address and data needed
to execute a command are latched on the rising edge of
WE# or the first edge of CEx that disables the device
(see Table 1). Standard microprocessor write timings
are used.
128Mb, 64Mb, 32Mb Q-Flash Memory
MT28F640J3_6.p65 – Rev. 5, Pub. 6/02
It is important to assert RP# during system reset.
The READ QUERY operation produces block status
The READ IDENTIFIER CODES operation produces
Writing commands to the CEL allows reading of de-
The BLOCK ERASE command requires suitable com-
t
RS, another command can be written.
PEN
= V
IH
), and
PENH
,
8
NOTE: When obtaining these identifier codes, A0 is not used
7FFFFFh
7F0003h
7F0002h
7F0000h
7EFFFFh
3FFFFFh
3F0003h
3F0002h
3F0000h
3EFFFFh
1F0003h
1F0002h
1F0000h
1EFFFFh
01FFFFh
010003h
010002h
010000h
00FFFFh
000004h
000003h
000002h
000001h
000000h
Device Identifier Code Memory Map
in either x8 or x16 modes. Data is always given on the
LOW byte in x16 mode (upper byte contains 00h).
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Block 127 Lock Configuration
Block 63 Lock Configuration
Block 31 Lock Configuration
Block 1 Lock Configuration
Block 0 Lock Configuration
(Blocks 64 through 126)
(Blocks 32 through 62)
(Blocks 2 through 30)
Manufacturer Code
Reserved for Future
Implementation
Reserved for Future
Implementation
Reserved for Future
Implementation
Reserved for Future
Implementation
Reserved for Future
Implementation
Reserved for Future
Implementation
Reserved for Future
Implementation
Reserved for Future
Implementation
Reserved for Future
Implementation
Device Code
128Mb, 64Mb, 32Mb
Figure 2
Q-FLASH MEMORY
Block 127
Block 63
Block 31
Block 1
Block 0
PRELIMINARY
©2002, Micron Technology, Inc.