ATF34143 Agilent(Hewlett-Packard), ATF34143 Datasheet - Page 2

• Manufacturer Part Number: ATF34143
• Description: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
• Manufacturer: Agilent(Hewlett-Packard)

ATF-34143 Absolute Maximum Ratings
Notes:
7. Distribution data sample size is 450
120
100
Figure 1. Typical/Pulsed I-V Curves
(V
Figure 3. NF @ 2 GHz, 4 V, 60 mA.
LSL=0.1, Nominal=0.47, USL=0.8
250
200
150
100
80
60
40
20
Symbol
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
50
0
GS
P
0
0
P
T
V
T
0
V
V
in max
= -0.2 V per step)
I
STG
GD
diss
DS
GS
CH
D
jc
0.2
2
NF (dB)
-3 Std
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
V
DS
0.4
4
(V)
Parameter
+3 Std
0.6
6
+0.6 V
–0.6 V
0 V
[2]
0.8
8
[6]
Cpk = 2.69167
Std = 0.04
9 Wafers
Sample Size = 450
.
[2]
[5]
8. Measurements made on production
[2]
[2]
test board. This circuit represents a
trade-off between an optimal noise
match and a realizeable match based
on production test requirements.
[4]
Product Consistency Distribution Charts
Units
dBm
mW
mA
C/W
V
V
V
C
C
120
100
120
100
[1]
Figure 2. OIP3 @ 2 GHz, 4 V, 60 mA.
LSL=29.0, Nominal=31.8, USL=35.0
Figure 4. Gain @ 2 GHz, 4 V, 60 mA.
LSL=16.0, Nominal=17.5, USL=19.0
80
60
40
20
80
60
40
20
0
0
29
16
2
-3 Std
16.5
Maximum
30
Absolute
-65 to 160
I
-3 Std
dss
725
160
165
5.5
17
-5
-5
31
17
OIP3 (dBm)
[3]
GAIN (dB)
17.5
32
+3 Std
33
18
+3 Std
Notes:
1. Operation of this device above any one
2. Assumes DC quiescent conditions.
3. V
4. Source lead temperature is 25 C.
5. Thermal resistance measured using
6. Under large signal conditions, V
18.5
34
of these parameters may cause
permanent damage.
Derate 6 mW/ C for T
150 C Liquid Crystal Measurement
method.
swing positive and the drain current
may exceed I
acceptable as long as the maximum
P
exceeded.
Circuit losses have been de-embedded
from actual measurements.
GS
diss
35
19
= 0 volts.
and P
Cpk = 1.37245
Std = 0.66
9 Wafers
Sample Size = 450
Cpk = 2.99973
Std = 0.15
9 Wafers
Sample Size = 450
in max
dss
. These conditions are
ratings are not
L
[7]
> 40 C.
GS
may