ATF34143 Agilent(Hewlett-Packard), ATF34143 Datasheet - Page 4

• Manufacturer Part Number: ATF34143
• Description: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
• Manufacturer: Agilent(Hewlett-Packard)

ATF-34143 Typical Performance Curves
Notes:
1. Measurements made on a fixed toned production test board that was tuned for optimal gain match with reasonable noise figure at 4 V,
2. P
Figure 6. OIP3 and P
V
2GHz.
Figure 9. OIP3 and P
V
900MHz.
Figure 12. Fmin vs. Frequency and
Current at 4 V.
1.2
1.0
0.8
0.6
0.4
0.2
DS
DS
35
30
25
20
15
10
35
30
25
20
15
10
60 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
is running closer to class B as power output approaches P
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V
I
5
0
5
0
0
DSQ
1dB
0
0
0
Tuned for NF @ 4V, 60 mA at
Tuned for NF @ 4 V, 60 mA at
= 10 mA, I
measurements are performed with passive biasing. Quicescent drain current, I
[1,2]
20
20
OIP3
[1,2]
OIP3
FREQUENCY (GHz)
40
2.0
40
P
I
I
d
1dB
DSQ
P
DSQ
60
1dB
increases to 62 mA as a P
60
(mA)
(mA)
1dB
1dB
80
4.0
80
vs. I
vs. I
100
DS
DS
100
120
3 V
4 V
3 V
4 V
60 mA
40 mA
20 mA
and
and
140
120
6.0
1dB
Figure 7. Associated Gain vs. Current
(I
Figure 10. Associated Gain vs. Current
(I
Figure 13. Associated Gain vs.
Frequency and Current at 4 V.
of +19 dBm is approached.
20
15
10
25
20
15
10
25
20
15
10
d
d
5
0
5
0
5
) and Voltage (V
) and Voltage (V
0
0
0
1.0
20
20
FREQUENCY (GHz)
1dB
CURRENT (mA)
CURRENT (mA)
2.0
40
40
. This results in higher PAE (power added efficiency) when compared to
3.0
60
60
4
D
D
) at 2 GHz.
) at 900 MHz.
4.0
80
80
100
100
5.0
60 mA
40 mA
20 mA
3 V
4 V
3 V
4 V
[1,2]
120
120
[1,2]
6.0
DSQ
, is set with zero RF drive applied. As P
Figure 8. Noise Figure vs. Current
(I
Figure 11. Noise Figure vs. Current
(I
0.8
0.6
0.4
0.2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
d
d
1
0
0
) and Voltage (V
) and Voltage (V
0
0
20
20
CURRENT (mA)
CURRENT (mA)
40
40
60
60
DS
DS
DS
) at 2 GHz.
) at 900 MHz.
= 4 V and
80
80
DSQ
the device
100
100
3 V
4 V
3 V
4 V
1dB
[1,2]
120
120
is
[1,2]