ATF34143 Agilent(Hewlett-Packard), ATF34143 Datasheet - Page 5

• Manufacturer Part Number: ATF34143
• Description: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
• Manufacturer: Agilent(Hewlett-Packard)

ATF-34143 Typical Performance Curves,
Note:
1. P
Figure 14. Fmin and G
and Temperature at V
Figure 17. NF, Gain, OP1dB and OIP3
vs. I
Noise Figure.
25
20
15
10
30
27
24
21
18
15
12
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
is running closer to class B as power output approaches P
a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V
I
9
6
3
0
DSQ
1dB
0
0
DS
measurements are performed with passive biasing. Quicescent drain current, I
= 10 mA, I
at 4 V and 5.8 GHz Tuned for
20
2000
FREQUENCY (GHz)
40
[1]
I
DSQ
d
-40 C
85 C
25 C
increases to 62 mA as a P
4000
60
(mA)
DS
a
= 4 V, I
vs. Frequency
80
6000
100
DS
Gain
OP1dB
OIP3
NF
= 60 mA.
8000
120
1.5
1.0
0.5
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1dB
of +19 dBm is approached.
Figure 15. P
Temperature at V
Figure 18. P
Tuned for NF @ 4 V, 60 mA at 2 GHz.
25
20
15
10
33
31
29
27
25
23
21
19
17
-5
5
0
0
0
1dB
2000
FREQUENCY (MHz)
1dB
1dB
. This results in higher PAE (power added efficiency) when compared to
50
P
OIP3
1dB
, IP3 vs. Frequency and
vs. I
continued
5
I
DS
DS
4000
(mA)
= 4 V, I
DS
Active Bias
100
DS
6000
= 60 mA.
-40 C
85 C
25 C
3 V
4 V
8000
150
DSQ
[1]
, is set with zero RF drive applied. As P
Figure 16. NF, Gain, OP1dB and OIP3
vs. I
Noise Figure.
Figure 19. P
Tuned for min NF @ 4 V, 60 mA at
900MHz.
25
20
15
10
35
30
25
20
15
10
-5
5
0
5
0
0
0
DS
at 4 V and 3.9 GHz Tuned for
20
40
1dB
50
[1]
I
DSQ
I
vs. I
DS
60
(mA)
(mA)
DS
DS
80
= 4 V and
Active Bias
100
100 120
DSQ
Gain
OP1dB
OIP3
NF
the device
3 V
4 V
1dB
150
140
is
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0