3SK290 Hitachi Semiconductor, 3SK290 Datasheet

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3SK290

Manufacturer Part Number
3SK290
Description
Silicon N-Channel Dual Gate MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
3SK290
Manufacturer:
HITACHI/日立
Quantity:
20 000
Application
UHF RF amplifier
Features
· Low noise figure.
· High gain.
Outline
NF = 2.3 dB Typ. at f = 900 MHz
PG = 19.3 dB Typ. at f = 900 MHz
CMPAK–4
Silicon N-Channel Dual Gate MOS FET
3
2
3SK290
4
1
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-271
1st. Edition

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3SK290 Summary of contents

Page 1

... Silicon N-Channel Dual Gate MOS FET Application UHF RF amplifier Features · Low noise figure 2.3 dB Typ 900 MHz · High gain 19.3 dB Typ 900 MHz Outline CMPAK–4 3SK290 Source 4 2. Gate1 3. Gate2 4. Drain ADE-208-271 1st. Edition ...

Page 2

... Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Attention: This device is very sensitive to electro static discharge recommended to adopt appropriate cautions when handling this transistor. ...

Page 3

... G1S(off) 0 — +1.0 G2S(off — fs Ciss 1.2 1.8 2.2 Coss 0.7 1.2 1.4 Crss — 0.02 0. 19.3 — NF — 2.3 2.8 3SK290 Unit Test conditions = 200 mA – G1S V = –3 V G2S = ±10 mA G2S DS = ±10 mA G1S DS = ± G1S G2S DS = ± ...

Page 4

... Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Drain Current vs. Gate 1 to Source Voltage 20 3 2 G2S 4 0 0.8 1.6 Gate 1 to Source Voltage 150 200 0 Ta (¡ 1 ...

Page 5

... Gate1 to Source Voltage Power Gain vs. Drain Current 2 1.5 (V) Drain Current G1S Noise Figure vs. Drain Current G2S f = 900 MHz Drain Current I (mA) D 3SK290 G2S f = 900 MHz (mA ...

Page 6

... S11 Parameter vs. Frequency 1.0 1 –.2 –.4 –.6 –1.5 –.8 –1 Condition 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90¡ 120¡ 150¡ 180¡ –150¡ –120¡ –90¡ ...

Page 7

... S22 ANG. MAG. ANG. 41.3 0.971 –1.9 88.9 0.971 –4.5 74.4 0.970 –7.1 81.6 0.969 –9.8 79.7 0.967 –12.1 72.6 0.965 –14.8 66.9 0.962 –17.3 70.9 0.959 –19.7 67 ...

Page 8

Hitachi Code JEDEC EIAJ Weight (reference ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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