3SK290 Hitachi Semiconductor, 3SK290 Datasheet - Page 7

• Manufacturer Part Number: 3SK290
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

S Parameter (V
Freq.
(MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
MAG.
0.998
0.994
0.997
0.991
0.993
0.980
0.976
0.971
0.962
0.955
0.945
0.939
0.927
0.925
0.911
0.901
0.893
0.881
0.876
0.869
DS
= 4 V, V
ANG.
–3.3
–6.7
–10.2
–13.5
–16.9
–20.8
–23.7
–27.0
–30.7
–33.7
–36.9
–40.2
–43.3
–46.5
–49.4
–52.3
–55.9
–59.0
–61.5
–64.3
G2S
S21
MAG.
2.17
2.20
2.19
2.17
2.16
2.12
2.10
2.08
2.05
2.03
1.99
1.96
1.93
1.90
1.87
1.84
1.81
1.78
1.75
1.71
= 3 V, I
D
ANG.
176
172
168
163
159
155
151
146
142
139
135
131
127
123
120
116
112
108
105
102
= 10 mA, Z
S12
MAG.
0.001
0.001
0.002
0.003
0.004
0.004
0.005
0.005
0.006
0.006
0.006
0.006
0.006
0.006
0.006
0.006
0.005
0.005
0.005
0.005
O
= 50 ½)
ANG.
41.3
88.9
74.4
81.6
79.7
72.6
66.9
70.9
67.7
63.9
64.1
63.9
59.9
60.0
58.3
60.3
62.0
61.2
65.0
68.8
S22
MAG.
0.971
0.971
0.970
0.969
0.967
0.965
0.962
0.959
0.956
0.953
0.950
0.946
0.942
0.939
0.933
0.930
0.925
0.921
0.917
0.913
3SK290
ANG.
–1.9
–4.5
–7.1
–9.8
–12.1
–14.8
–17.3
–19.7
–22.1
–24.8
–27.2
–29.5
–32.1
–34.6
–36.7
–39.1
–41.5
–43.8
–46.1
–48.4
7