3SK290 Hitachi Semiconductor, 3SK290 Datasheet - Page 5

• Manufacturer Part Number: 3SK290
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

30
24
18
12
–0.5
6
0
V
Gate1 to Source Voltage V
f = 1 kHz
DS
Forward Transfer Admittance
vs. Gate 1 to Source Voltage
= 6 V
0
2.5 V
0.5
1.0 V
V
1.5 V
2.0 V
G2S
1.0
5
4
3
2
1
0
= 3.0 V
G1S
1.5
Noise Figure vs. Drain Current
Drain Current
4
(V)
2.0
8
12
I
20
16
12
D
8
4
0
V
V
f = 900 MHz
DS
G2S
(mA)
16
= 4 V
= 3 V
Power Gain vs. Drain Current
4
Drain Current
20
8
12
I
D
V
V
f = 900 MHz
G2S
DS
(mA)
16
= 4 V
= 3 V
3SK290
20
5