3SK290 Hitachi Semiconductor, 3SK290 Datasheet - Page 2

• Manufacturer Part Number: 3SK290
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

3SK290
Absolute Maximum Ratings (Ta = 25¡C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Attention: This device is very sensitive to electro static discharge.
2
It is recommended to adopt appropriate cautions when handling this transistor.
Symbol
V
V
V
I
Pch
Tch
Tstg
D
DS
G1S
G2S
Ratings
12
±8
±8
25
100
125
–55 to +125
Unit
V
V
V
mA
mW
°C
°C