3SK290 Hitachi Semiconductor, 3SK290 Datasheet - Page 6

• Manufacturer Part Number: 3SK290
• Description: Silicon N-Channel Dual Gate MOS FET
• Manufacturer: Hitachi Semiconductor

3SK290
6
0
–.2
.2
180¡
–150¡
150¡
–.4
.4
S11 Parameter vs. Frequency
Condition:
50 to 1000 MHz (50 MHz step)
.2
S12 Parameter vs. Frequency
–.6
.6
Condition:
50 to 1000 MHz (50 MHz step)
–120¡
120¡
.4
–.8
.8
.6 .8 1.0
V
I
D
DS
–1
= 10 mA , Zo = 50
1
V
I
= 4 V , V
D
DS
–90¡
90¡
= 10 mA , Zo = 50
1.5
= 4 V , V
–1.5
2
1.5
G2S
3 4 5
Scale: 0.002 / div.
–2
G2S
= 3 V
–60¡
2
60¡
W
3
10
–3
= 3 V
4
–4
5
–5
W
10
–10
–30¡
30¡
0¡
180¡
0
–.2
.2
–150¡
150¡
–.4
.4
S22 Parameter vs. Frequency
Condition:
50 to 1000 MHz (50 MHz step)
S21 Parameter vs. Frequency
.2
Condition:
50 to 1000 MHz (50 MHz step)
–120¡
–.6
120¡
.6
.4
–.8
.8
.6 .8
V
I
D
DS
V
I
–1
= 10 mA , Zo = 50
D
1
DS
–90¡
1.0
= 4 V , V
90¡
= 10 mA , Zo = 50
= 4 V , V
1.5
–1.5
2
1.5
Scale: 1 / div.
G2S
3 4 5
G2S
–60¡
60¡
–2
= 3 V
2
= 3 V
W
3
10
–3
W
4
–4
5
–5
–30¡
30¡
10
–10
0¡