BFU660F NXP Semiconductors, BFU660F Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BFU660F
Manufacturer Part Number
BFU660F
Description
NPN wideband silicon RF transistor
Manufacturer
NXP Semiconductors
Datasheet
1.BFU660F.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFU660F
Manufacturer:
NXP/恩智浦
Quantity:
20 000
www.DataSheet.co.kr
NXP Semiconductors
BFU660F
Product data sheet
Fig 4.
Fig 6.
C
(fF)
CBS
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
200
160
120
80
40
0
0
f = 1 MHz, T
collector-base voltage; typical values
V
Gain as a function of collector current; typical value
Collector-base capacitance as a function of
CE
= 1 V; T
amb
amb
4
= 25 °C.
= 25 °C.
(dB)
8
G
30
20
10
0
V
0
All information provided in this document is subject to legal disclaimers.
CB
001aam825
(V)
MSG
20
Rev. 1 — 11 January 2011
12
(1)
(2)
(3)
(4)
40
Fig 5.
60
(GHz)
G
fT
p(max)
25
20
15
10
5
0
0
V
Transition frequency as a function of collector
current; typical values
80
CE
001aam827
I
C
= 1 V; f = 2 GHz; T
(mA)
20
100
NPN wideband silicon RF transistor
40
amb
60
= 25 °C.
BFU660F
© NXP B.V. 2011. All rights reserved.
80
001aam826
I
C
(mA)
100
6 of 12
Datasheet pdf - http://www.DataSheet4U.net/