BFU660F NXP Semiconductors, BFU660F Datasheet - Page 6

• Manufacturer Part Number: BFU660F
• Description: NPN wideband silicon RF transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
BFU660F
Product data sheet
Fig 4.
Fig 6.
C
(fF)
CBS
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
200
160
120
80
40
0
0
f = 1 MHz, T
collector-base voltage; typical values
V
Gain as a function of collector current; typical value
Collector-base capacitance as a function of
CE
= 1 V; T
amb
amb
4
= 25 °C.
= 25 °C.
(dB)
8
G
30
20
10
0
V
0
All information provided in this document is subject to legal disclaimers.
CB
001aam825
(V)
MSG
20
Rev. 1 — 11 January 2011
12
(1)
(2)
(3)
(4)
40
Fig 5.
60
(GHz)
G
fT
p(max)
25
20
15
10
5
0
0
V
Transition frequency as a function of collector
current; typical values
80
CE
001aam827
I
C
= 1 V; f = 2 GHz; T
(mA)
20
100
NPN wideband silicon RF transistor
40
amb
60
= 25 °C.
BFU660F
© NXP B.V. 2011. All rights reserved.
80
001aam826
I
C
(mA)
100
6 of 12
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