BFU660F NXP Semiconductors, BFU660F Datasheet - Page 5

• Manufacturer Part Number: BFU660F
• Description: NPN wideband silicon RF transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
Table 7.
T
[1]
BFU660F
Product data sheet
Symbol
IP3
j
Fig 2.
= 25
O
G
(mA)
p(max)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
C
°
60
40
20
C unless otherwise specified
0
0
T
collector-emitter voltage; typical values
Collector current as a function of
B
B
B
B
B
B
B
B
is the maximum power gain, if K > 1. If K < 1 then G
Parameter
output third-order intercept point
amb
Characteristics
= 400 μA
= 350 μA
= 300 μA
= 250 μA
= 200 μA
= 150 μA
= 100 μA
= 50 μA
= 25 °C.
1
2
…continued
3
All information provided in this document is subject to legal disclaimers.
4
001aam823
V
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
CE
(V)
Rev. 1 — 11 January 2011
5
Conditions
I
Z
C
S
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
= 40 mA; V
p(max)
= Z
L
= 50 Ω; T
= MSG.
Fig 3.
h
CE
FE
200
150
100
50
= 4 V;
0
amb
0
V
DC current gain as a function of collector
current; typical values
CE
= 25 °C
= 2 V; T
NPN wideband silicon RF transistor
amb
20
= 25 °C.
Min Typ
-
-
-
-
40
BFU660F
I
© NXP B.V. 2011. All rights reserved.
27
27
27
28
C
001aam824
(mA)
Max Unit
-
-
-
-
60
5 of 12
dBm
dBm
dBm
dBm
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