BFU660F NXP Semiconductors, BFU660F Datasheet - Page 2

• Manufacturer Part Number: BFU660F
• Description: NPN wideband silicon RF transistor
• Manufacturer: NXP Semiconductors

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NXP Semiconductors
2. Pinning information
3. Ordering information
BFU660F
Product data sheet
1.4 Quick reference data
Table 1.
[1]
[2]
Table 2.
Table 3.
Symbol
V
V
V
I
P
h
C
f
IP3
G
NF
P
Pin
1
2
3
4
Type number
BFU660F
C
T
FE
CBO
CEO
EBO
tot
L(1dB)
CBS
p(max)
O
T
G
sp
p(max)
is the temperature at the solder point of the emitter lead.
is the maximum power gain, if K > 1. If K < 1 then G
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base capacitance
transition frequency
output third-order intercept
point
maximum power gain
noise figure
output power at 1 dB gain
compression
Quick reference data
Discrete pinning
Ordering information
Description
emitter
base
emitter
collector
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 1 — 11 January 2011
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Conditions
open emitter
open base
open collector
T
I
T
V
I
f = 2 GHz; T
I
f = 5.8 GHz; T
I
f = 1.8 GHz; T
I
f = 1.8 GHz; Γ
T
I
Z
f = 1.8 GHz; T
C
C
C
C
C
C
sp
j
amb
S
CB
= 10 mA; V
= 25 °C
= 20 mA; V
= 40 mA; V
= 30 mA; V
= 6 mA; V
= 60 mA; V
= Z
≤ 90 °C
= 2 V; f = 1 MHz
= 25 °C
L
= 50 Ω;
amb
CE
Simplified outline
CE
CE
CE
CE
CE
amb
amb
S
amb
NPN wideband silicon RF transistor
= 2 V;
p(max)
= Γ
= 25 °C
= 2 V;
= 1 V;
= 4 V;
= 1 V;
= 4 V;
= 25 °C
= 25 °C
= 25 °C
opt
3
2
= MSG.
;
1
4
[1]
[2]
Min Typ
-
-
-
-
-
90
-
-
-
-
-
-
Graphic symbol
BFU660F
© NXP B.V. 2011. All rights reserved.
-
-
-
30
-
135
138
21
28
24
0.65
17
2
mbb159
Max Unit
16
5.5
2.5
60
225
180
-
-
-
-
-
-
Version
SOT343F
1, 3
4
2 of 12
V
V
V
mA
mW
fF
GHz
dBm
dB
dB
dBm
Datasheet pdf - http://www.DataSheet4U.net/