PBSS303PD Philips Semiconductors, PBSS303PD Datasheet
PBSS303PD
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PBSS303PD Summary of contents
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... PBSS303PD PNP low V Rev. 01 — 31 May 2006 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS303ND. 1.2 Features I Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High efficiency due to less heat generation ...
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... Ordering information Package Name Description SC-74 plastic surface-mounted package (TSOP6); 6 leads Marking codes Marking code AH Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat Simplified outline Symbol © Koninklijke Philips Electronics N.V. 2006. All rights reserved. ...
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... T amb junction temperature ambient temperature storage temperature O , standard footprint ms Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat Min Max - [ [ ...
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... Thermal characteristics Conditions in free air O , standard footprint ms Rev. 01 — 31 May 2006 PBSS303PD PNP low V (BISS) transistor CEsat 006aaa270 75 125 175 amb Min Typ Max [ ...
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... Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS303PD_1 Product data sheet Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat 006aaa271 (s) p 006aaa272 ...
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... Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS303PD_1 Product data sheet Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat 006aaa273 (s) p 006aaa751 ...
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... 100 150 300 Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat Min Typ = 180 265 [1] 160 235 [1] 130 ...
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... Characteristics …continued Conditions Bon Boff 100 MHz = MHz 300 s; 0.02. p Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat Min Typ Max = 0 230 - - ...
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... I (mA (1) T (2) T (3) T Fig 9. Base-emitter saturation voltage as a function of collector current; typical values Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat 006aaa728 I = 190 mA B 171 152 133 114 0.4 0.8 1.2 1 ...
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... I (mA amb ( ( ( Fig 13. Collector-emitter saturation resistance as a function of collector current; typical values Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat 006aaa732 (1) (2) ( (mA 100 ...
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... (probe) oscilloscope 450 Bon Boff Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat input pulse (idealized waveform) I (100 %) Bon I Boff output pulse (idealized waveform 006aaa266 ...
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... Dimensions in mm Packing methods Package Description SOT457 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat 1.1 0.9 4 0.6 0.2 3 0.40 0.26 0.25 0.10 04-11-08 [1] Packing quantity 3000 [2] -115 ...
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... Fig 18. Wave soldering footprint SOT457 (SC-74) PBSS303PD_1 Product data sheet 3.45 1.95 0.95 2.825 1.60 1.70 3.10 3.20 5.30 1.40 4.30 Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area solder paste msc422 solder lands solder resist 0.45 1.45 4.45 occupied area solder paste MSC423 © ...
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... Revision history Document ID Release date PBSS303PD_1 20060531 PBSS303PD_1 Product data sheet PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD (BISS) transistor CEsat Supersedes - © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 31 May 2006 www.DataSheet4U.com PBSS303PD PNP low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Document identifier: PBSS303PD_1 www.DataSheet4U.com (BISS) transistor All rights reserved. Date of release: 31 May 2006 ...