PBSS303PD Philips Semiconductors, PBSS303PD Datasheet - Page 10
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PBSS303PD
Manufacturer Part Number
PBSS303PD
Description
3 A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS303PD.pdf
(16 pages)
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Philips Semiconductors
PBSS303PD_1
Product data sheet
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
V
R
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
CEsat
CEsat
(V)
( )
10
10
10
10
10
10
10
1
1
1
2
3
2
1
2
I
function of collector current; typical values
I
function of collector current; typical values
10
10
C
C
amb
amb
amb
amb
amb
amb
/I
/I
1
B
1
B
= 20
= 20
= 100 C
= 25 C
= 55 C
= 100 C
= 25 C
= 55 C
1
1
10
10
10
10
2
2
(1)
(2)
(3)
10
10
006aaa731
006aaa733
3
I
(1)
(2)
(3)
3
I
C
C
(mA)
(mA)
10
10
Rev. 01 — 31 May 2006
4
4
Fig 11. Collector-emitter saturation voltage as a
Fig 13. Collector-emitter saturation resistance as a
R
V
(1) I
(2) I
(3) I
(1) I
(2) I
(3) I
CEsat
CEsat
( )
(V)
10
10
10
10
10
10
10
10
1
1
1
2
3
3
2
1
2
T
function of collector current; typical values
T
function of collector current; typical values
10
10
C
C
C
C
C
C
amb
amb
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
1
1
60 V, 3 A PNP low V
= 100
= 50
= 10
= 100
= 50
= 10
= 25 C
= 25 C
1
1
10
10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
(1)
(2)
(3)
(1)
(2)
(3)
PBSS303PD
10
10
2
2
CEsat
10
10
(BISS) transistor
006aaa732
006aaa734
www.DataSheet4U.com
3
I
3
I
C
C
(mA)
(mA)
10
10
4
4
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