PBSS303PD Philips Semiconductors, PBSS303PD Datasheet - Page 9
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PBSS303PD
Manufacturer Part Number
PBSS303PD
Description
3 A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS303PD.pdf
(16 pages)
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Philips Semiconductors
PBSS303PD_1
Product data sheet
Fig 6. DC current gain as a function of collector
Fig 8. Base-emitter voltage as a function of collector
(1) T
(2) T
(3) T
V
(1) T
(2) T
(3) T
h
(V)
BE
FE
600
400
200
1.2
0.8
0.4
0
0
V
current; typical values
V
current; typical values
10
10
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 2 V
= 2 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
10
10
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006aaa727
3
I
3
I
C
C
(mA)
(mA)
10
10
Rev. 01 — 31 May 2006
4
4
Fig 7. Collector current as a function of
Fig 9. Base-emitter saturation voltage as a function of
V
(1) T
(2) T
(3) T
BEsat
(A)
(V)
I
C
1.2
0.8
0.4
6
4
2
0
0
T
collector-emitter voltage; typical values
10
I
collector current; typical values
C
0
amb
amb
amb
amb
/I
I
B
B
1
60 V, 3 A PNP low V
= 190 mA
= 20
= 25 C
= 55 C
= 25 C
= 100 C
171
152
133
114
95
76
0.4
1
(1)
(2)
(3)
0.8
10
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
PBSS303PD
10
1.2
2
CEsat
10
(BISS) transistor
1.6
006aaa728
006aaa730
www.DataSheet4U.com
V
3
I
57
38
19
C
CE
(mA)
(V)
10
2.0
4
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