PBSS303PD Philips Semiconductors, PBSS303PD Datasheet - Page 8

• Manufacturer Part Number: PBSS303PD
• Description: 3 A PNP low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
PBSS303PD_1
Product data sheet
Table 7.
T
[1]
Symbol Parameter
t
t
t
t
t
t
f
C
d
r
on
s
f
off
T
amb
c
Pulse test: t
= 25 C unless otherwise specified.
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
Characteristics
p
300 s;
Rev. 01 — 31 May 2006
0.02.
…continued
Conditions
V
I
V
f = 100 MHz
f = 1 MHz
Bon
CC
CE
CB
= 0.1 A; I
= 10 V; I
= 10 V; I
= 9.2 V; I
C
E
Boff
C
= i
= 100 mA;
= 2 A;
60 V, 3 A PNP low V
= 0.1 A
e
= 0 A;
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
-
-
-
-
PBSS303PD
CEsat
Typ
13
53
66
230
76
306
110
58
(BISS) transistor
www.DataSheet4U.com
Max
-
-
-
-
-
-
-
-
8 of 16
Unit
ns
ns
ns
ns
ns
ns
MHz
pF