PBSS303PD Philips Semiconductors, PBSS303PD Datasheet - Page 4
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PBSS303PD
Manufacturer Part Number
PBSS303PD
Description
3 A PNP low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PBSS303PD.pdf
(16 pages)
Available stocks
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Manufacturer
Quantity
Price
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Part Number:
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NXP
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Philips Semiconductors
6. Thermal characteristics
PBSS303PD_1
Product data sheet
Table 6.
[1]
[2]
[3]
[4]
[5]
Symbol
R
R
Fig 1. Power derating curves
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
Pulse test: t
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, mounting pad for collector 1 cm
(4) FR4 PCB, standard footprint
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
p
10 ms;
(mW)
P
1600
1200
2
tot
O
800
400
Rev. 01 — 31 May 2006
3
0
, standard footprint
10 %.
75
25
2
(1)
(2)
(3)
(4)
O
3
, standard footprint.
Conditions
in free air
25
2
2
60 V, 3 A PNP low V
75
125
[1][5]
T
006aaa270
[1]
[2]
[3]
[4]
amb
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
-
-
( C)
175
PBSS303PD
CEsat
Typ
-
-
-
-
-
-
(BISS) transistor
w w w . D a t a S h e e t 4 U
Max
350
208
167
113
50
45
2
2
.
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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