PBSS4480X Philips Semiconductors, PBSS4480X Datasheet - Page 2

• Manufacturer Part Number: PBSS4480X
• Description: 80 V/ 4 A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
package.
PNP complement: PBSS5480X.
MARKING
Note
1. * = p: made in Hong Kong.
ORDERING INFORMATION
2004 Oct 25
PBSS4480X
PBSS4480X
TYPE NUMBER
High h
High collector current capability: I
High efficiency leading to less heat generation.
Medium power peripheral drivers; e.g. fan, motor
Strobe flash units for DSC and mobile phones
Inverter applications; e.g. TFT displays
Power switch for LAN and ADSL systems
Medium power DC-to-DC conversion
Battery chargers.
80 V, 4 A
NPN low V
* = t: made in Malaysia.
* = W: made in China.
TYPE NUMBER
FE
CEsat
and low V
transistor in a SOT89 (SC-62) plastic
CEsat
CEsat
NAME
at high current operation
(BISS) transistor
MARKING CODE
C
maximum 4 A
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
*1Y
(1)
2
QUICK REFERENCE DATA
PINNING
DESCRIPTION
V
I
I
R
SYMBOL
C
CM
CEO
CEsat
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT89) and symbol.
collector-emitter voltage 80
collector current (DC)
peak collector current
equivalent
on-resistance
emitter
collector
base
3
PARAMETER
2
1
DESCRIPTION
Product specification
PBSS4480X
3
4
10
54
sym042
MAX.
VERSION
2
1
SOT89
V
A
A
m
UNIT