PBSS4480X Philips Semiconductors, PBSS4480X Datasheet - Page 9

• Manufacturer Part Number: PBSS4480X
• Description: 80 V/ 4 A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2004 Oct 25
80 V, 4 A
NPN low V
V
I
(1) T
(2) T
(3) T
Fig.10 Base-emitter saturation voltage as a
(1) I
(2) I
(3) I
(4) I
Fig.12 Collector current as a function of
C
BEsat
(V)
/I
(A)
I
B
C
1.2
0.8
0.4
10
= 20.
B
B
B
B
0
8
6
4
2
0
10
amb
amb
amb
= 190 mA.
= 171 mA.
= 152 mA.
= 133 mA.
0
1
= 55 C.
= 25 C.
= 100 C.
function of collector current; typical values.
collector-emitter voltage; typical values.
(4)
0.4
1
(3)
CEsat
(5) I
(6) I
(7) I
(8) I
(2)
0.8
10
(1)
(2)
(3)
(10)
(1)
(5)
(6)
(7)
(8)
(9)
B
B
B
B
(BISS) transistor
= 114 mA.
= 95 mA.
= 76 mA.
= 57 mA.
10
1.2
2
10
1.6
(9) I
(10) I
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I
V
C
CE
(mA)
B
B
(V)
= 38 mA.
= 19 mA.
10
2
4
9
R
I
(1) T
(2) T
(3) T
Fig.11 Equivalent on-resistance as a function of
V
T
Fig.13 Base-emitter turn-on voltage as a function
C
CEsat
amb
( )
BEon
(V)
/I
10
10
B
10
10
1.2
0.8
0.4
10
= 20.
1
= 25 C.
0
3
2
1
2
10
amb
amb
amb
10
1
1
= 100 C.
= 25 C.
= 55 C.
collector current; typical values.
of collector current; typical values.
1
1
10
10
10
10
(2)
2
2
PBSS4480X
Product specification
10
10
(3)
(1)
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3
001aab321
3
I
I
C
C
(mA)
(mA)
10
10
4
4