PBSS4480X Philips Semiconductors, PBSS4480X Datasheet - Page 7

• Manufacturer Part Number: PBSS4480X
• Description: 80 V/ 4 A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Oct 25
I
I
I
h
V
R
V
V
f
C
amb
CBO
CES
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
CEsat
c
80 V, 4 A
NPN low V
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CEsat
300 s;
PARAMETER
(BISS) transistor
0.02.
V
V
T
V
V
V
V
V
V
I
I
I
I
note 1
I
note 1
I
note 1
I
I
I
note 1
I
note 1
I
I
f = 100 MHz
I
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
E
j
CB
CB
CE
EB
CE
CE
CE
CE
= 150 C
= i
= 0.5 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 5 A; I
= 5 A; I
= 0.5 A; I
= 1 A; I
= 1 A; I
= 4 A; I
= 2 A; V
= 100 mA; V
= 5 V; I
= 80 V; I
= 80 V; I
= 80 V; V
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
e
CONDITIONS
= 0 A; V
B
B
B
B
B
B
B
B
7
CE
C
= 50 mA
= 40 mA
= 200 mA;
= 500 mA;
= 500 mA;
= 50 mA
= 100 mA;
= 400 mA;
C
C
C
C
B
B
E
E
= 50 mA
= 50 mA
= 0 A
= 0.5 A
= 1 A; note 1 250
= 2 A; note 1 175
= 4 A; note 1 80
= 2 V
BE
CB
= 0 A
= 0 A;
CE
= 0 V
= 10 V;
= 10 V;
250
120
MIN.
400
400
270
140
25
55
110
170
200
40
0.78
0.79
0.82
0.95
0.78
150
35
TYP.
PBSS4480X
Product specification
100
50
100
100
40
80
160
230
270
54
0.85
0.9
0.95
1.05
0.85
50
MAX.
nA
nA
nA
mV
mV
mV
mV
mV
m
V
V
V
V
V
MHz
pF
A
UNIT