PBSS4480X Philips Semiconductors, PBSS4480X Datasheet - Page 3

• Manufacturer Part Number: PBSS4480X
• Description: 80 V/ 4 A NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Operated under pulsed conditions; pulse width t
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
5. Device mounted on a 7 cm
2004 Oct 25
V
V
V
I
I
I
I
I
P
T
T
T
C
CRM
CM
B
BM
j
amb
stg
CBO
CEO
EBO
tot
80 V, 4 A
NPN low V
SYMBOL
mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook” .
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
CEsat
(BISS) transistor
2
PARAMETER
ceramic printed-circuit board, 1 cm
p
10 ms; duty cycle
3
open emitter
open base
open collector
note 4
t
t = 1 ms or limited by T
t
T
p
amb
notes 1 and 2
note 2
note 3
note 4
note 5
300 s
10 ms;
CONDITIONS
2
25 C
single-sided copper and tin-plated. For other
0.1
0.2.
j(max)
65
65
MIN.
PBSS4480X
Product specification
80
80
5
4
6
10
1
2
2.5
550
1
1.4
1.6
150
+150
+150
MAX.
V
V
V
A
A
A
A
A
W
mW
W
W
W
C
C
C
UNIT
2
2
.
.