NT256D72S89AKGU Nanya Technology, NT256D72S89AKGU Datasheet - Page 12

• Manufacturer Part Number: NT256D72S89AKGU
• Description: 256MB DDR SDRAM DIMM
• Manufacturer: Nanya Technology

NT256D72S89AKGU
256MB : 32M x 72
Low Profile Registered DDR SDRAM DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
(TA = 0 °C ~ 70 °C; V
REV 1.1
12/2002
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
IS
IPW
RPRE
RPST
RAS
RC
RFC
RCD
RAP
RP
RRD
WR
DAL
WTR
PDEX
XSNR
XSRD
REFI
Address and control input setup time
(slow slewrate)
Input pulse width
Read preamble
Read postamble
Active to Precharge command
Active to Active/Auto-refresh
command period
Auto-refresh to Active/Auto-refresh
command period
Active to Read or Write delay
Active to Read Command with
Autoprecharge
Precharge command period
Active bank A to Active bank B
command
Write recovery time
Auto precharge write recovery +
precharge time
Internal write to read command delay
Power down exit time
Exit self-refresh to non-read
command
Exit self-refresh to read command
Average Periodic Refresh Interval
DDQ
= 2.5V ± 0.2V; V
Parameter
DD
= 2.5V ± 0.2V, See AC Characteristics) (Part 2 of 2)
(t
(t
WR
0.40
RP
Min.
200
1.0
2.2
0.9
7.5
45
65
75
20
20
20
15
15
75
+
1
/t
/t
CK
CK
)
)
-7K
120,000
Max.
0.60
12
1.1
7.8
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
(t
(t
WR
RP
Min.
0.40
200
2.2
7.5
1.0
0.9
45
65
75
20
20
20
15
15
75
+
1
/t
/t
CK
CK
)
)
-75B
120,000
Max.
0.60
1.1
7.8
(t
(t
WR
RP
Min.
0.40
200
1.1
0.9
50
70
80
20
20
20
15
15
80
+
1
8
/t
/t
CK
CK
)
)
-8B
120,000
© NANYA TECHNOLOGY CORP.
Max.
0.60
1.1
7.8
-
Unit
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
CK
CK
CK
CK
CK
10-12,
Notes
1-4, 8
2-4,
2-4,
1-4,
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
14
12
13