MX26LV160AT Macronix International, MX26LV160AT Datasheet - Page 53

• Manufacturer Part Number: MX26LV160AT
• Description: 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
• Manufacturer: Macronix International

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Note:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions : 25 C, 3.3V VCC. Programming spec. assume
3. Maximum values are measured at VCC=3.0V, worst case temperature. Maximum values are up to including 2K
4. System-level overhead is the time required to execute the command sequences for the all program command.
5. Excludes 00H programming prior to erasure. (In the pre-programming step of the embedded erase algorithm, all bits
6. Min. erase/program cycles is under : 3.3V VCC, 25 C, checkerboard pattern conditions, and without baking process.
P/N:PM1123
TABLE 17. LATCH-UP CHARACTERISTICS
TABLE 16. ERASE AND PROGRAMMING PERFORMANCE (1)
PARAMETER
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time (Word/Byte Mode)
Erase/Program Cycles
Input Voltage with respect to GND on ACC, OE#, RESET#, A9
Input Voltage with respect to GND on all power pins, Address pins, CE# and WE#
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
that all bits are programmed to checkerboard pattern.
program/erase cycles.
are programmed to 00H before erasure)
MX26LV160AT/AB
53
2K (6)
MIN.
TYP. (2)
LIMITS
2.4
80
55
70
70
MAX. (3)
-100mA
320
220
280
140
15
-1.0V
-1.0V
-1.0V
MIN.
REV. 1.1, NOV. 18, 2004
UNITS
Cycles
VCC + 1.0V
VCC + 1.0V
sec
sec
sec
+100mA
us
us
MAX.
12V