mrf6s9160h Freescale Semiconductor, Inc, mrf6s9160h Datasheet - Page 10

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mrf6s9160h

Manufacturer Part Number
mrf6s9160h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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MRF6S9160HR3 MRF6S9160HSR3
Figure 16. Series Equivalent Source and Load Impedance
Z
Z
source
load
Input
Matching
Network
Z
MHz
850
865
880
895
910
o
= 2 Ω
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
f = 910 MHz
source
0.61 - j1.27
0.66 - j1.15
0.64 - j1.05
0.55 - j0.90
0.48 - j0.74
Z
Z
DQ
source
source
Ω
= 1200 mA, P
Device
Under
Test
Z
load
f = 850 MHz
f = 850 MHz
out
f = 910 MHz
Z
= 35 W Avg.
1.20 + j0.03
1.26 + j0.15
1.31 + j0.22
1.32 + j0.28
1.26 + j0.32
load
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data

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